.png)
先进固态半导体实验室
Advanced Solid-state Semiconductor Lab
Prof.Wei Kong
Department of material science and engineering,
Westlake University, Hangzhou, China
Email：kongwei@westlake.edu.cn
Postdoctoral Fellow
Junshuai Li
Chinese Academy of Science
-
Wide bandgap semiconductor power device
-
Compound semiconductor epitaxy;
-
Nanowire growth
Huaze Zhu
University Of Science And Technology Of China
-
Transmission Electron Microscopy
-
New low-dimensional heterojunction
Graduate Students
Jichuang Shen
LanZhou University
-
High quality 2D materials synthesis and devices farbrication.
Wenhao Li
Central South University
-
2D materials and device
Tong Jiang
Qingdao University
-
Wide-bandgap semiconductor materials.
-
Power devices and photodetectors.
Research Assistants
Administrative Assistants
Yingying Zhang
University of Jinan
Qiyu Xing
University of California，Los Angeles
-
Large area 2D material synthesis
Laixiang Qin
Peking University
-
Novel two dimensional device for beyond Moore period
Haoxiang Duan
Nankai University
-
2D materials and device
Jun Yang
University of Science and Technology of China
-
3D heterogeneous structure stacking process to explore new interface physical phenomena including electrical, optical, etc.
Tingyu Zhu
King's College London
-
Physics
Haojie Zhu
Zhejiang University
-
Electronic and information engineering
Yifei Wang
Beihang University
-
Material science and engineering
Runze Liu
Sichuan University
-
Organic wafer bonding
-
Wearable system
Chen Ji
Taiwan University of Science and Technology
-
Two-Dimensional Materials Synthesis
Hao Wang
The University of New South Wales
-
Wide-band Gap material
Yiyang XU
Huazhong University of Science and Technology
-
2D materials synthesis
Junwei Cao
Beijing University of Chemical technology
-
Novel character measurement of 2D materails and thin film device
Xiang Xu
The University of Melbourne
-
Flexible electronic material components
-
Wide bandgap semiconductor materials
Han Chen
Harbin Engineering University
-
First-principles calculations
Yaqing Ma
Harbin Institute of Technology
-
Ga2O3 high-speed epitaxy based on HVPE
-
Large-area GaN templates beyond wafer-scale