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先进固态半导体实验室

Advanced Solid-state Semiconductor Lab

1. Wenhao Li, Jichuang Shen, Yaqing Ma, Xiang Xu, Han Chen, Lida Yu, Chen Ji, Menglin He, Kezhao Ma, Yiwei Duo, Li Wang, Tongbo Wei, Liping Shi, Muhong Wu, Kaihui Liu, Huaze Zhu,* and Wei Kong*. "3D Crystal Construction by Single-Crystal 2D Material Supercell Multiplying", Advanced Science, doi:10.1002/advs.202411656 (2024).

2.Hyunseok Kim, Yunpeng Liu, Kuangye, Celesta S. Chang, Dongchul Sung, Marx Akl, Kuan Qiao, Ki Seok Kim, Bo-In Park, Menglin Zhu, Jun Min Suh, Jekyung Kim, Junseok Jeong, Yongmin Baek, You Jin Ji, Sungsu Kang, Sangho Lee, Ne Myo Han, Chansoo Kim, Chanyeol Choi, Xinyuan Zhang, Hyeong-Kyu Choi, Yanming Zhang, Haozhe Wang, Lingping Kong, Nordin Noor Afeefah, Mohamed Nainar Mohamed Ansari, Jungwon Park, Kyusang Lee, Geun Young Yeom, Sungkyu Kim, Jinwoo Hwang, Jing Kong, Sang-Hoon Bae, Yunfeng Shi, Suklyun Hong, Wei Kong&Jeehwan Kim. "High-throughput manufacturing of epitaxial membranes from a single wafer by 2Dmaterials-based layer transfer process",Nature nanotechnology, 18, 464–470 (2023).

3. Yeongin Kim, Jun Min Suh, Jiho Shin, Yunpeng Liu, Hanwool Yeon, Kuan Qiao, Hyun S Kum, Chansoo Kim, Han Eol Lee, Chanyeol Choi, Hyunseok Kim, Doyoon Lee, Jaeyong Lee, Ji-Hoon Kang, Bo-In Park, Sungsu Kang, Jihoon Kim, Sungkyu Kim, Joshua A Perozek, Kejia Wang, Yongmo Park, Kumar Kishen, Lingping Kong, Tomás Palacios, Jungwon Park, Min-Chul Park, Hyung-jun Kim, Yun Seog Lee, Kyusang Lee, Sang-Hoon Bae, Wei Kong, Jiyeon Han, Jeehwan Kim. "Chip-less wireless electronic skins by remote epitaxial freestanding compound semiconductors", Science, 377, 859–864 (2022).

4. Hyunseok Kim, Celesta S. Chang, Sangho Lee, Jie Jiang, Junseok Jeong, Minseong Park, Yuan Meng, Jongho Ji, Yeunwoo Kwon, Xuechun Sun, Wei Kong*, Hyun S. Kum*, Sang-Hoon Bae*, Kyusang Lee*, Young Joon Hong*, Jian Shi*, and Jeehwan Kim*, "Remote epitaxy" , Nature Reviews Methods Primers 2, 40 (2022).

5. K. Qiao, Y. Liu, C. Kim, R. J. Molnar, T. Osadchy, W. Li, X. Sun, H. Li, R. L. Myers-Ward, D. Lee, S. Subramanian, H. Kim, K. Lu, J. A. Robinson, W. Kong*, J. Kim*. Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes. Nano Lett., 21, 9, 4013–4020 (2021).

6. H. Kum†, H. Lee†, S. Kim†, S. Lindemann†, W. Kong, K. Qiao, P. Chen, S. Subramanian, L. Ranno, S. Seo, J. Irwin, S.-H. Bae, H. Li, K. Lee, M. S. Rzchowski, J. A. Robinson, B. Yildiz, C.-B. Eom, and J. Kim “Heterogeneous integration of freestanding epitaxial complex-oxide membranes”, Nature 578 75–81 (2020).

7. S.-H. Bae, K. Lu, Y. Han, S. Kim, K. Qiao, C. Choi, Y. Nie, H. Kim, H. S Kum, P. Chen, W. Kong, B.-S. Kang, C. Kim, J. Lee, Y. Baek, J. Shim, J. Park, M. Joo, D. A Muller, K. Lee, and J. Kim, “Graphene-assisted spontaneous relaxation towards dislocation-free heteroepitaxy”, Nature Nanotechnology 15, 272–276 (2020).

8. W. Kong, S.-H. Bae, H. Kum, J. Kim, “Path towards graphene commercialization from lab to market”, Nature Nanotechnology 14 927-938 (2019).

9. H. Kum, D. Lee, W. Kong, Y. Kim, K. Lee, and J. Kim, “Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices”, Nature Electronics 2 439–450 (2019).

10. S.-H. Bae, H. Kum, W. Kong, Y. Kim, C. Choi, B. Lee, P. Lin, and J. Kim, “Integration of bulk materials with two-dimensional materials for physical coupling and their applications”. Nature Materials 18, 550–560 (2019).

11. W. Kong†, H. Li†, K. Qiao†, Y. Kim, K. Lee, Y. Nie, D. Lee, T. Osadchy, R. J. Molnar, D. K. Gaskill, R. L. Myers-Ward, K. M. Daniels, Y. Zhang, S. Sundram, Y. Yu, S.-H. Bae, S. Rajan, Y. Shao-Horn, K. Cho, A. Ougazzaden, J. C. Grossman, and J. Kim, “Polarity governs atomic interaction through two-dimensional materials”. Nature Materials 17, pp. 999-1004 (2018).

12. J. Shim†, S.-H. Bae†, W. Kong† (equal contributor), D. Lee, K. Qiao, D. Nezich, Y. J. Park, R. Zhao, S. Sundaram, X. Li, H. Yeon, C. Choi, H. Kum, R. Yue, G. Zhou, Y. Ou, K. Lee, J. Moodera, X. Zhao, J.-H. Ahn, C. Hinkle, A. Ougazzaden, and J. Kim, “Controlled crack propagation for atomic precision handling of wafer scale two dimensional materials”. Science 362, pp. 665-670 (2018).

13. J. Shim, D.-H. Kang, Y. Kim, H. Kum, W. Kong, S.-H. Bae, I. Almansouri, K. Lee, J. -H. Park, and J. Kim, “Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices”. Carbon 133 78-89 (2018).

14. T.-J. Lu, M. Fanto, H. Choi, P. Thomas, J. Steidle, S. Mouradian, W. Kong, D. Zhu, H. Moon, K. Berggren, J. Kim, M. Soltani, S. Preble, and D. Englund, “Aluminum nitride integrated photonics platform for the ultraviolet to visible spectrum”. Optical Express, 26 (9), 11147-11160 (2018).

15. Y. Kim, S. S. Cruz, Y. Song, B. O. Alawode, J. M. Johnson, W. Kong, C. Heidelberger, C. Choi, K. Lee, S. Choi, E. A. Fitzgerald, A. M. Kolpak, J. Kong, J. Hwang, and J. Kim, “Remote epitaxy through graphene enables two-dimensional material-based layer transfer”. Nature, 544 pp340 (2017).

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