PUBLICATIONS | konglab

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先进固态半导体实验室

Advanced Solid-state Semiconductor Lab

Jichuang Shen†, Xiaopeng Xie†, Wenhao Li, Chaoyue Deng, Yaqing Ma, Han Chen, Huixia Fu, Fang-Sen Li, Bingkai Yuan, Chen Ji, Ruihua He*, Jiaqi Guan*, Wei Kong*, "Metal-assisted vacuum transfer enabling in situvisualization of charge density waves inmonolayer MoS₂", Science Advances, 11, 13, eadr9753(2025).
Tong Jiang†, Hao Wang†, Huaze Zhu, Junwei Cao, Xiaoqing Huo, Zhiqing Yang, Junshuai Li, Yaqing Ma, Shengnan Zhang, Xiang Xu, Wei Kong*. "Single‐Crystalline β-Ga₂O₃ Homoepitaxy on a Near Van der Waals Surface of (100) Substrate", Advanced Science, DOI: 10.1002/advs.202417436 (2025).
Yu Xiao†, Yize Liu†, Bihua Zhang†, Peng Chen, Huaze Zhu, Enhui He, Jiayi Zhao, Wenju Huo, Xiaofei Jin, Xumeng Zhang, Hao Jiang, De Ma, Qian Zheng, Huajin Tang, Peng Lin*, Wei Kong*, Gang Pan*, "Bio-plausible reconfigurable spiking neuron for neuromorphic computing", Science Advances, 11, 6, eadr6733 (2025).
Han Chen†, Chen Ji†, Yuxuan Chen†, Hongyu Hou, Wenhao Li, Jichuang Shen, Changhong Cao, Huaze Zhu*, Huashan Li*, Wei Kong*, "Interfacial Atomic Mechanisms of Single‐Crystalline MoS₂ Epitaxy on Sapphire", Advanced Materials, DOI: 10.1002/adma.202414317 (2025).

K. Qiao, Y. Liu, C. Kim, R. J. Molnar, T. Osadchy, W. Li, X. Sun, H. Li, R. L. Myers-Ward, D. Lee, S. Subramanian, H. Kim, K. Lu, J. A. Robinson, W. Kong*, J. Kim*. Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes. Nano Lett., 21, 9, 4013–4020 (2021).

Y. Kim, S. S. Cruz, Y. Song, B. O. Alawode, J. M. Johnson, W. Kong, C. Heidelberger, C. Choi, K. Lee, S. Choi, E. A. Fitzgerald, A. M. Kolpak, J. Kong, J. Hwang, and J. Kim, “Remote epitaxy through graphene enables two-dimensional material-based layer transfer”. Nature, 544 pp340 (2017).

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